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以下是对 J COMPUT ELECTRON 杂志介绍 收藏
缩写名/全名
J COMPUT ELECTRON
Journal of Computational Electronics
ISSN号 1569-8025
研究方向 ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED
影响因子 2015:1.104, 2016:1.526, 2017:1.431, 2018:1.637, 2019:1.532,
出版国家 UNITED STATES
出版周期
年文章数 146
出版年份 2002
是否OA No
审稿周期(仅供参考) >12周,或约稿
录用比例 容易
投稿链接 https://www.editorialmanager.com/JCEL/default.aspx
投稿官网 http://www.springer.com/engineering/computational+intelligence+and+complexity/journal/10825
h-index 27
CiteScore
CiteScoreSJRSNIPCiteScore排名
1.530.3100.792
学科分区排名
大类:Physics and Astronomy
小类:Atomic and Molecular Physics, and Optics
Q285 / 173
大类:Materials Science
小类:Electronic, Optical and Magnetic Materials
Q2108 / 225
大类:Mathematics
小类:Modelling and Simulation
Q2115 / 259
大类:Engineering
小类:Electrical and Electronic Engineering
Q2280 / 661

PubMed Central (PMC)链接 http://www.ncbi.nlm.nih.gov/nlmcatalog?term=1569-8025%5BISSN%5D
中科院SCI期刊分区
( 2018年新版本)
大类学科小类学科Top期刊综述期刊
工程技术 2区4区3区
ENGINEERING, ELECTRICAL & ELECTRONIC
工程:电子与电气
4区2区4区
PHYSICS, APPLIED
物理:应用
4区2区4区
中科院SCI期刊分区
( 2020年新版本)
大类学科小类学科Top期刊综述期刊
工程技术 2区3区3区
ENGINEERING, ELECTRICAL & ELECTRONIC
工程:电子与电气
1区2区4区
PHYSICS, APPLIED
物理:应用
3区4区4区
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1.A model for nonvolatile <Emphasis Type="Italic">p</Emphasis>-channel metal–ferroelectric–metal–insulator–semiconductor field-effect transistors (MFMIS FETs)

Author: Jing Sun, Yanping Li, Lei Cao
Journal: Journal of Computational Electronics, 2019, Vol., , DOI:10.1007/s10825-019-01320-8
    DOI
2.A comparative study of a deep-trench superjunction SiC VDMOS device

Author: Shengdong Hu, Ye Huang, Tao Liu, Jingwei Guo, Jian’an Wang, Jun Luo
Journal: Journal of Computational Electronics, 2019, Vol., , DOI:10.1007/s10825-019-01318-2
    DOI
3.Rational design of the nonlinear optical materials dinaphtho[2,3-<Emphasis Type="Italic">b</Emphasis>:2′,3′-<Emphasis Type="Italic">d</Emphasis>]thiophene-5,7,12,13-tetraone (DNTTRA) and its phenyldiazenyl derivatives using first-principles calculations

Author: Ziran Chen, Yuan Li, Yonghua Guan, Hongping Li
Journal: Journal of Computational Electronics, 2019, Vol., , DOI:10.1007/s10825-019-01300-y
    DOI
4.Numerical study on the field-emission properties of a graphene–C<Subscript>60</Subscript> composite

Author: Bing Yang, Yanqi Yang, Xiaoming Yuan, Lin Deng, Ping Yang
Journal: Journal of Computational Electronics, 2018, Vol., , DOI:10.1007/s10825-018-1276-8
    DOI
5.Junctionless MOSFETs with laterally graded-doping channel for analog/RF applications

Author: Yongbo Chen, Mohamed Mohamed, Michael Jo, Umberto Ravaioli, Ruimin Xu
Journal: Journal of Computational Electronics, 2013, Vol.12, 757-764, DOI:10.1007/s10825-013-0478-3
    DOI
6.Time-dependent quantum transport theory from non-equilibrium Green’s function approach

Author: Jian Wang
Journal: Journal of Computational Electronics, 2013, Vol.12, 343-355, DOI:10.1007/s10825-013-0465-8
    DOI
7.Optimization of saddle junctionless FETs for extreme high integration

Author: Xiaoshi Jin, Meile Wu, Xi Liu, Jung-Hee Lee, Jong-Ho Lee
Journal: Journal of Computational Electronics, 2016, Vol.15, 801-808, DOI:10.1007/s10825-016-0830-5
    DOI
8.Inversion of rectification characteristics modulated by ribbon widths in armchair graphene/<Emphasis Type="Italic">h</Emphasis>-BN nano-ribbon hetero-junctions with different interface types

Author: Lihua Wang, Zizhen Zhang, Bingjun Ding, Yong Guo
Journal: Journal of Computational Electronics, 2017, Vol.16, 601-609, DOI:10.1007/s10825-017-1007-6
    DOI
9.Spin filtering in a $$updelta $$-magnetic-barrier nanostructure modulated by Rashba and Dresselhaus spin–orbit couplings

Author: Sai-Yan Chen, Shi-Peng Yang, Qiang Tang, Yong-Long Zhou
Journal: Journal of Computational Electronics, 2017, Vol.16, 347-353, DOI:10.1007/s10825-017-0976-9
    DOI
10.Effect of molecular structure on spin-dependent electron transport in biferrocene-based molecular junctions: a first-principles study

Author: Shundong Yuan, Shiyan Wang, Yudou Wang, Qidan Ling
Journal: Journal of Computational Electronics, 2017, Vol.16, 340-346, DOI:10.1007/s10825-017-0968-9
    DOI
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